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Optical photolithography typically uses a mercury lamp to generate ultraviolet (UV) radiation at a wavelength of 365 nm. Although the use of this wavelength is adequate for the production of today’s semiconductor devices, it will not be adequate for semiconductor devices manufactured in the near future because these devices will need lithography capabilities at 248 nm or 193 nm to name just a few examples. Lithography at these new wavelengths is known generally as extreme UV (EUV) lithography.
A projection lens may be used to project an image of a reticle onto the photoresist. However, current EUV lithography may not be able to achieve sufficient resolution. Resolution refers to the ability of a lithography system to print ever-smaller features. Further, current EUV lithography may not have sufficient depth of focus for all applications. The resolution and depth of focus can be defined as follows:
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Optical photolithography typically uses a mercury lamp to generate ultraviolet (UV) radiation at a wavelength of 365 nm. Although the use of this wavelength is adequate for the production of today’s semiconductor devices, it will not be adequate for semiconductor devices manufactured in the near future because these devices will need lithography capabilities at 248 nm or 193 nm to name just a few examples. Lithography at these new wavelengths is known generally as extreme UV (EUV) lithography.
A projection lens may be used to project an image of a reticle onto the photoresist. However, current EUV lithography may not be able to achieve sufficient resolution. Resolution refers to the ability of a lithography system to print ever-smaller features. Further, current EUV lithography may not have sufficient depth of focus for all applications. The resolution and depth of focus can be defined as follows:
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Optical photolithography typically uses a mercury lamp to generate ultraviolet (UV) radiation at a wavelength of 365 nm. Although the use of this wavelength is adequate for the production of today’s semiconductor devices, it will not be adequate for semiconductor devices manufactured in the near future because these devices will need lithography capabilities at 248 nm or 193 nm to name just a few examples. Lithography at these new wavelengths is known generally as extreme UV (EUV) lithography.
A projection lens may be used to project an image of a reticle onto the photoresist. However, current EUV lithography may not be able to achieve sufficient resolution. Resolution refers to the ability of a lithography system to print ever-smaller features. Further, current EUV lithography may not have sufficient depth of focus for all applications. The resolution and depth of focus can be defined as follows:
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SlideSearchEngine.com is a specialised online agregator and search engine! We collect presentations from publicly available sources.
These presentations are classified and categorized, so you will always find everything clearly laid out and in context.
We are staying up to date! We are looking for more relevant data on social networks.Integrated circuits (ICs) are produced by fabricating layers of material, including both conductive and dielectric materials, on semiconductor wafers. To produce an integrated circuit, a number of individual layers of material are patterned using photolithography to form desired features. The process of producing these patterns is known generally as photolithography. To produce these layers of material, layers of material such as photoresist may be applied to the wafer. The photoresist is then patterned, developed, and the underlying layer(s) may then be etched, using the patterned photoresist as a mask.
Optical photolithography typically uses a mercury lamp to generate ultraviolet (UV) radiation at a wavelength of 365 nm. Although the use of this wavelength is adequate for the production of today’s semiconductor devices, it will not be adequate for semiconductor devices manufactured in the near future because these devices will need lithography capabilities at 248 nm or 193 nm to name just a few examples. Lithography at these new wavelengths is known generally as extreme UV (EUV) lithography.
A projection lens may be used to project an image of a reticle onto the photoresist. However, current EUV lithography may not be able to achieve sufficient resolution. Resolution refers to the ability of a lithography system to print ever-smaller features. Further, current EUV lithography may not have sufficient depth of focus for all applications. The resolution and depth of focus can be defined as follows:
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Optical photolithography typically uses a mercury lamp to generate ultraviolet (UV) radiation at a wavelength of 365 nm. Although the use of this wavelength is adequate for the production of today’s semiconductor devices, it will not be adequate for semiconductor devices manufactured in the near future because these devices will need lithography capabilities at 248 nm or 193 nm to name just a few examples. Lithography at these new wavelengths is known generally as extreme UV (EUV) lithography.
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SlideSearchEngine.com is a specialised online agregator and search engine! We collect presentations from publicly available sources.
These presentations are classified and categorized, so you will always find everything clearly laid out and in context.
We are staying up to date! We are looking for more relevant data on social networks.Integrated circuits (ICs) are produced by fabricating layers of material, including both conductive and dielectric materials, on semiconductor wafers. To produce an integrated circuit, a number of individual layers of material are patterned using photolithography to form desired features. The process of producing these patterns is known generally as photolithography. To produce these layers of material, layers of material such as photoresist may be applied to the wafer. The photoresist is then patterned, developed, and the underlying layer(s) may then be etched, using the patterned photoresist as a mask.
Optical photolithography typically uses a mercury lamp to generate ultraviolet (UV) radiation at a wavelength of 365 nm. Although the use of this wavelength is adequate for the production of today’s semiconductor devices, it will not be adequate for semiconductor devices manufactured in the near future because these devices will need lithography capabilities at 248 nm or 193 nm to name just a few examples. Lithography at these new wavelengths is known generally as extreme UV (EUV) lithography.
A projection lens may be used to project an image of a reticle onto the photoresist. However, current EUV lithography may not be able to achieve sufficient resolution. Resolution refers to the ability of a lithography system to print ever-smaller features. Further, current EUV lithography may not have sufficient depth of focus for all applications. The resolution and depth of focus can be defined as follows:
Resolution = λ / NA 2 · PA , where, λ is the wavelength of light, and NA

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SlideSearchEngine.com is a specialised online agregator and search engine! We collect presentations from publicly available sources.
These presentations are classified and categorized, so you will always find everything clearly laid out and in context.
We are staying up to date! We are looking for more relevant data on social networks.Integrated circuits (ICs) are produced by fabricating layers of material, including both conductive and dielectric materials, on semiconductor wafers. To produce an integrated circuit, a number of individual layers of material are patterned using photolithography to form desired features. The process of producing these patterns is known generally as photolithography. To produce these layers of material, layers of material such as photoresist may be applied to the wafer. The photoresist is then patterned, developed, and the underlying layer(s) may then be etched, using the patterned photoresist as a mask.
Optical photolithography typically uses a mercury lamp to generate ultraviolet (UV) radiation at a wavelength of 365 nm. Although the use of this wavelength is adequate for the production of today’s semiconductor devices, it will not be adequate for semiconductor devices manufactured in the near future because these devices will need lithography capabilities at 248 nm or 193 nm to name just a few examples. Lithography at these new wavelengths is known generally as extreme UV (EUV) lithography.
A projection lens may be used to project an image of a reticle onto the photoresist. However, current EUV lithography may not be able to achieve sufficient resolution. Resolution refers to the ability of a lithography system to print ever-smaller features. Further, current EUV lithography may not have sufficient depth of focus for all applications. The resolution and depth of focus can be defined as follows:
Resolution = λ / NA 2 · PA , where, λ is the wavelength of light, and NA

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We are staying up to date! We are looking for more relevant data on social networks.Integrated circuits (ICs) are produced by fabricating layers of material, including both conductive and dielectric materials, on semiconductor wafers. To produce an integrated circuit, a number of individual layers of material are patterned using photolithography to form desired features. The process of producing these patterns is known generally as photolithography. To produce these layers of material, layers of material such as photoresist may be applied to the wafer. The photoresist is then patterned, developed, and the underlying layer(s) may then be etched, using the patterned photoresist as a mask.
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