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Pink Panther 2 Dual Audio 720p Vs 1080p

Black Panther (2018) Hindi Dubbed Movie. 2 (2017) Hindi Dubbed Movie.1) Field of the Invention
The invention relates to a method for making a thin-film polycrystalline silicon layer using a laser decomposition technique.
2) Description of the Related Art
The conventional manufacturing technology for thin-film polycrystalline silicon thin-film transistors (TFTs) may be mainly divided into a chemical vapor deposition (CVD) method and a laser decomposition (LD) method.
In the CVD method, reactants are decomposed by plasma, forming a thin-film silicon layer. The CVD method is mainly used to make large-area polycrystalline silicon thin-film with relatively large grain sizes (about 4 μm).
In the LD method, silicon thin films are formed by decomposition of organometallic precursor thin films using a laser and then oxidizing the silicon thin films using oxygen gas. This method is mainly used to make small-area silicon thin-film devices, such as silicon solar cells, which require monocrystalline grains with sizes of less than 10 μm.
In the LD method, laser beams irradiated to the organometallic precursor thin film causes dissociation of the organometallic precursor thin film and suppresses diffusion of the silicon atoms by creating a nonequilibrium carrier state in the interface between the silicon and the gas molecules. Thus, fine silicon grains with a size of less than 10 μm can be grown.
However, the grain size of thin-film polycrystalline silicon made by the CVD method is significantly larger than that of thin-film polycrystalline silicon made by the LD method. The size of monocrystalline silicon is smaller than the size of thin-film polycrystalline silicon, so that the film made from monocrystalline silicon is amorphous.
The TFT using thin-film polycrystalline silicon is applied to a variety of devices, such as integrated circuits, liquid crystal displays, and organic light emitting diodes. The range of application of the TFTs extends to various electronic devices, such as image sensors and solar cells, because of their high mobility and uniformity.
The TFT using thin-film polycrystalline silicon has a conductivity of about 10−3 S/cm or below, which is one hundred or more times smaller than the conductivity of an amorphous silicon TFT. Thus, many

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