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HELP US CREATE AN INDEPENDENT FLAT-PAY GAMES SITE FOR GAMERS!Your donation will enable us to keep creating more games for you. Please use the Paypal link above and you’ll get a discount! Thank you and hope to see you there!Advanced chemical vapor deposition (CVD) processes, such as, for example, low-pressure chemical vapor deposition (LP-CVD), atmospheric pressure chemical vapor deposition (APCVD), and plasma enhanced chemical vapor deposition (PECVD), are typically used to deposit thin films for a variety of applications in the electronics industry. These films may include but are not limited to dielectric films, interconnecting films, diffusion barrier films, and the like. Thin films deposited by CVD may include a multiplicity of impurities that are incorporated as defects or contaminates into the thin film during deposition. These defects and contaminants are considered undesirable as they can negatively affect the performance of the thin film in its intended application.
CVD thin film quality, including film uniformity, defect density and densification, and contamination density and uniformity, is determined after the film is formed by a variety of methods such as, for example, cross sectioning, X-ray diffraction and Fourier transform infrared spectroscopy. Cross sectioning may require delaminating the film from a sample substrate by mechanical or chemical means. The film may be deposited on a substrate with desired features. The substrate may then be milled off, leaving a cross section of the substrate and the film. The cross section may then be analyzed to determine the uniformity of the film. While cross sectioning is an accurate and reliable method for determining the quality of a film, it is not applicable to high temperature processes which may damage fragile substrates. Furthermore, cross sectioning is an invasive process, requiring the removal of sample substrate material.
Films may also be analyzed using other methods. For example, X-ray diffraction may be used to determine the density of a film

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